Magnetic storage device
US8154917B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2011 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Mar 3, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and configured to fixedly hold the potential of the data transfer line, and a reading circuit which is connected to the reading signal line and which reads the storage information of the memory cell. The reading circuit includes a hold switch connected between the reading signal line and a reading node N and configured to hold the potential of the node N, a capacitor connected between the node N and a ground end, a precharging switch connected between the node N and a power source and configured to charge the capacitor, and an inverter to which the potential of the node N is input to generate a digital signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.