Semiconductor laser
US8155161B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 2010 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Jun 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a semiconductor laser region and a wavelength-monitoring region. The semiconductor laser region includes a first optical waveguide that includes a gain waveguide, the first optical waveguide having one end and another end opposite the one end. The wavelength-monitoring region includes a second optical waveguide that is optically coupled to the first optical waveguide with the one end therebetween, and a photodiode structure that is optically coupled to the second optical waveguide. In the wavelength-monitoring region, the second optical waveguide is branched into three or more optical waveguides, and at least two optical waveguides among the three or more optical waveguides form first ring resonators having optical path lengths different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.