Fabricating method of electron-emitting device
US8157606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2009 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Dec 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/04
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A fabricating method of an electron-emitting device is provided. The fabricating method of the electron-emitting device includes at least following procedures. Firstly, a substrate is provided. Next, a first electrode and a second electrode are formed on the substrate. Afterward, a conductive layer covering the first electrode and the second electrode is formed on the substrate. Then, a first conductive layer, a second conductive layer and a gap are formed by patterning the conductive layer. The gap is disposed between the first conductive layer and the second conductive layer. After that, a plasma process is performed at the first conductive layer and second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.