Method of forming a sapphire single crystal
US8157913B2 · kind B2 · utility
3Cited by
37References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2008 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Sep 6, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.