Boron-doped diamond semiconductor
US8158455B2 · kind B2 · utility
4Cited by
11References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2009 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Aug 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.