Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
US8158537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2010 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Nov 24, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.