Thin-film photovoltaic structures including semiconductor grain and oxide layers
US8158880B1 · kind B1 · utility
12Cited by
14References
30Claims
0Family size
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Key dates
| Filing date | Jan 17, 2008 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Apr 24, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/954
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer may be disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.