Thin film transistor devices with different electrical characteristics and method for fabricating the same
US8158985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2010 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Aug 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.