Heterostructure device and associated method

US8159002B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Vinayak Tilak · Clifton Park, US
• Alexei Vertiatchikh · Niskayuna, US
• Kevin Sean Matocha · Rexford, US
• Peter Micah Sandvik · Guilderland, US
• Siddharth Rajan · Columbus, US

Key dates

• Filing date: Dec 20, 2007
• Grant date: Apr 17, 2012
• Expiry date: Dec 20, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed between the first region and the second region. The third region provides a switchable electrically conductive pathway from the source electrode to the drain electrode. The third region includes iodine ions. A system includes a heterostructure field effect transistor that includes the device.