Density transition zones for integrated circuits
US8159044B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2009 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Aug 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit is provided with a spiral inductor and a transition zone surrounding the spiral inductor. The transition zone may have a geometry that is substantially eight-sided or octagonal. Metal layers in the transition zone may have metal fill that is substantially octagonal and arranged in rows and columns. If desired, square or rectangular metal fill be tiled with the substantially octagonal metal fill. Metal layers may also contain halved or quartered octagonal metal fill. Substrate in the transition zone may have octagonal substrate regions separated by shallow trench isolation regions. A polysilicon layer above the substrate may have square regions of polysilicon fill directly above the shallow trench regions in the substrate. Such arrangements may provide more uniform densities in transition zones with certain geometries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.