Double-stacked EBG structure
US8159413B2 · kind B2 · utility
5Cited by
1References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2006 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Apr 7, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a double-stacked electromagnetic bandgap (EBG) structure, a first conductive plane and a second conductive plane are spaced apart in parallel. At least two EBG layers are embedded in parallel between the first conductive plane and the second conductive plane. The at least two EBG layers have different stopband characteristics. A plurality of vias connect the at least two EBG layers respectively to one of the first and second conductive planes. At least the vias connecting one of the EBG layers pass through via holes in cells of another EBG layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.