Method of directly reading output voltage to determine data stored in a non-volatile memory cell
US8159877B2 · kind B2 · utility
2Cited by
17References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2010 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Jul 1, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An NVM cell design enables direct reading of cell output voltage to determine data stored in the cell, while providing low current consumption and a simple program sequence that utilizes reverse Fowler-Nordheim tunneling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.