Reference voltage optimization for flash memory
US8159881B2 · kind B2 · utility
65Cited by
1References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2010 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system includes a voltage generator and a reference voltage setting module. The voltage generator is configured to generate K voltages to be applied to memory cells. The K voltages are used to determine a reference voltage used to read the memory cells, where K is an integer greater than 1. The reference voltage setting module is configured to selectively set the reference voltage to a value between two adjacent ones of the K voltages or one of the two adjacent ones of the K voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.