Two-dimensional diode-laser array with broad-band output
US8160115B2 · kind B2 · utility
3Cited by
16References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Jan 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
It is demonstrated that substantial operating-parameter-dependent temperature-differences can exist between diode-laser bars in pulsed operation of a stack of such bars arranged to provide a two-dimensional array of diode-laser emitters. These differences can produce distortion of the aggregate output spectrum of the stack. By selecting particular nominal emitting wavelengths of the diode-laser bars for specific positions in the stack, the aggregate emission-spectrum can be tailored to a desired shape for one or more sets of operating parameters of the stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.