Semiconductor laser and method for manufacturing the same
US8160116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2008 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Jun 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3412
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor laser including a first conductive type of a lower clad layer 12, an active layer 14 provided on the lower clad layer 12, the active layer 14 including a plurality of quantum dots, and a second conductive type of an upper clad layer 18, the upper clad layer 18 being provided on the active layer 14 so as to have an isolated ridge portion 30 such that W1≦Wtop+0.4 μm where Wtop is the width of a top of the ridge portion 30 and W1 is the width of the ridge portion 30 at a height of 50 nm from a bottom of the ridge portion 30. The present invention also provides a method for manufacturing such a semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.