Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
US8163088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2006 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Jul 18, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4587
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.