Magnetron sputtering device
US8163144B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 17, 2005 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Jul 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3438
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a magnetron sputtering device and technique for depositing materials onto a substrate at a high production rate in which the deposited films have predictive thickness distribution and in which the apparatus can operate continuously and repeatedly for very long periods. The present invention has realized increased production by reducing cycle time. Increased coating rates are achieved by coupling a planetary drive system with a large cathode. The cathode diameter is greater than the diameter of a planet and less than twice the diameter of the planet. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.