Method and apparatus for lifting off photoresist beneath an overlayer
US8163185B1 · kind B1 · utility
147Cited by
22References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Feb 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49032
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of lifting off photoresist beneath an overlayer includes providing a structure including photoresist and depositing an overlayer impenetrable to a liftoff solution over the photoresist and a field region around the structure. The method also includes forming a mask over the structure and ion milling to remove the overlayer in the field region not covered by the mask. The method then includes lifting off the photoresist using the liftoff solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.