Detection device and system
US8163240B2 · kind B2 · utility
2Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Aug 27, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T436/11
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.