Vapour deposition method
US8163337B2 · kind B2 · utility
4Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2004 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Nov 13, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/044
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a vapor deposition method which can be used to deposit mixtures of materials in progressively varying amounts on a substrate (1) and which can be used for a variety of purposes, but is of especial value in combinatorial chemistry, the path of the vaporized material from the source (3) to the substrate (1) is partially interrupted by a mask (5), the positioning of the mask in a plane parallel to the plane defined by the substrate (1) being such that the material is deposited on the substrate (1) in a thickness which increases substantially continuously in a direction along the substrate (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.