Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof
US8163576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2009 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.