Patent · US Active

Semiconductor and optoelectronic devices

US8163581B1 · kind B1 · utility

35Cited by
197References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 13, 2010
Grant dateApr 24, 2012
Priority date—
Expiry dateOct 13, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Techniques to utilize layer transfer schemes such as ion-cut to form novel light emitting diodes (LEDs), CMOS image sensors, displays, microdisplays and solar cells are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.