Method for fabricating a light emitting diode chip including etching by a laser beam
US8163582B2 · kind B2 · utility
7Cited by
3References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 22, 2008 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Apr 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A method for fabricating substrate-free LED chips has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed laser beam. By scanning a second pulsed laser beam through the growth substrate to the multilayer semiconductor structure, the LED chips are detached from the growth substrate while simultaneously forming surface features on the chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.