Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
US8163587B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2009 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface, and depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents. The method further includes heating the substrate in a baking ambient to a first temperature of between about 200° C. and about 800° C. and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern. The method also includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas, wherein a ratio of the carrier N2 gas to the reactive O2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C., and for a second time period of about 5 minutes to about 35 minutes. The method also includes heating the substrate in a drive-in ambient to a third temperature of between about 800° C. and about 1100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.