Methods of manufacturing nonvolatile memory devices
US8163616B2 · kind B2 · utility
21Cited by
1References
5Claims
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Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Sep 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
Abstract
Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.