Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof
US8163651B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 12, 2008 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Feb 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02483
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.