Patent · US Active

Process for adjusting the size and shape of nanostructures

US8163657B2 · kind B2 · utility

4Cited by

2References

30Claims

0Family size

Inventors

Stephen Y. Chou · Princeton, US
Ying Wang · Beijing, CN
Xiaogan Liang · Ann Arbor, US
Yixing Liang · Princeton, US

Key dates

Filing date	May 4, 2009
Grant date	Apr 24, 2012
Priority date	—
Expiry date	Jan 7, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/90
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.