Patent · US Active

Mask health monitor using a faraday probe

US8164068B2 · kind B2 · utility

3Cited by

3References

14Claims

0Family size

Assignee

Varian Semiconductor Equipment Associates, Inc. · US

Inventors

Benjamin B. Riordon · Newburyport, US
Nicholas P. T. Bateman · Reading, US
William T. Weaver · Austin, US
Russell J. Low · Rowley, US

Key dates

Filing date	Jul 28, 2010
Grant date	Apr 24, 2012
Priority date	—
Expiry date	Oct 27, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.