Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof
US8164154B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Dec 17, 2010 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A low profile high power Schottky barrier bypass diode for solar cells and panels with the cathode and anode electrodes on the same side of the diode and a method of fabrication thereof are disclosed for generating a thin chip with both electrodes being on the same side of the chip. In an embodiment, a mesa isolation with a Zener diode over the annular region surrounding the central region of the mesa anode in the Epi of the substrate is formed. In an embodiment, a P-type Boron dopant layer is ion implanted in the annular region for the Zener Diode. This controls recovery from high voltage spikes from the diode rated voltage. A Schottky barrier contact for the anode and a contact for the cathode are simultaneously created on the same side of the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.