Patent · US Active

Light emitting device with improved conversion layer

US8164250B2 · kind B2 · utility

0Cited by
3References
7Claims
0Family size

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Inventors

Key dates

Filing dateSep 20, 2005
Grant dateApr 24, 2012
Priority date
Expiry dateJun 20, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0361
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A light emitting device includes a substrate layer and a light conversion layer located on said substrate layer. The light conversion layer is a polycrystalline ceramic layer, and is positioned on the substrate layer by sintering.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.