Light emitting device with improved conversion layer
US8164250B2 · kind B2 · utility
0Cited by
3References
7Claims
0Family size
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Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Jun 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A light emitting device includes a substrate layer and a light conversion layer located on said substrate layer. The light conversion layer is a polycrystalline ceramic layer, and is positioned on the substrate layer by sintering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.