Display apparatus using oxide semiconductor and production method thereof

US8164256B2 · kind B2 · utility

Assignee

• Canon Kabushiki Kaisha · JP

Inventors

• Masafumi Sano · Kyoto, JP
• Kenji Takahashi · Kaisei, JP

Key dates

• Filing date: Nov 30, 2007
• Grant date: Apr 24, 2012
• Expiry date: Apr 15, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/12

Abstract

A display apparatus includes a light-emitting layer, a pair of electrodes sandwiching the light-emitting layer, a transistor with an active layer for driving the light-emitting layer through the pair of the electrodes, and a matrix wiring portion having a scanning electrode line, a signal electrode line, and a first insulating layer. The active layer has an oxide which contains In and Zn and at least a part of which is amorphous, and further includes a second insulating layer containing hydrogen in an amount of less than 3×1021 atoms/cm3 disposed between the active layer and the first insulating layer.