Diode chain with a guard-band
US8164869B2 · kind B2 · utility
1Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2008 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Jan 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
The present invention provides an ESD protection device having at least one diode in a well of a first conductivity type formed in a substrate of a second conductivity type. The circuit further includes a guard-band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between the diode cathode, the substrate and the guard-band.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.