Patent · US Active

Magnetic shift register memory

US8164939B2 · kind B2 · utility

0Cited by
2References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 23, 2010
Grant dateApr 24, 2012
Priority date
Expiry dateSep 18, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C19/0808
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.