Nonvolatile memory device and related method of programming
US8164952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2010 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3436
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory cells, a voltage generator configured to generate voltages to program the plurality of memory cells, and a control logic component configured to control the voltage generator to provide a plurality of program voltages to selected memory cells during successive iterations of a program loop. Wherein where memory cells corresponding to one logic state are judged to be program passed during a current iteration of the program loop, the control logic component controls the voltage generator such that a program voltage corresponding to the one logic state is skipped during subsequent iterations of the program loop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.