Nonvolatile semiconductor memory device which can electrically rewrite data and system therefor
US8164961B2 · kind B2 · utility
6Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 12, 2010 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Mar 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device includes a memory cell, latch circuits, and an arithmetic operation circuit. The memory cell stores data by a difference in threshold voltage. A read operation is performed twice or more on the memory cell under the same read conditions, and the latch circuits store a plurality of read data. The arithmetic operation circuit takes majority decision of the plurality of data stored in the latch circuits and decides data determined by the majority decision as data stored in the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.