Semiconductor memory device and method of manufacturing the same
US8168493B2 · kind B2 · utility
36Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2011 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Mar 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a semiconductor substrate including a first active region and a second active region, a gate electrode including a silicide layer formed on the first active region and a resistor pattern formed on the second active region. A distance from a top surface of the semiconductor substrate to a top surface of the resistor pattern is smaller than a distance from a top surface of the semiconductor substrate to a top surface of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.