Carbon nanotube high frequency transistor technology
US8168495B1 · kind B1 · utility
12Cited by
22References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2007 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Nov 26, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A technique of the invention reduces significantly the distance between the gate and single-walled carbon nanotubes to improve performance and efficiency of a carbon nanotube transistor device. Without using a porous template structure, single-walled carbon nanotubes are grown perpendicularly to a substrate between a base metal layer and a middle mesh layer. The nanotubes are insulated with a thin insulator and then gate regions are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.