Semiconductor device using graphene and method of manufacturing the same
US8168964B2 · kind B2 · utility
39Cited by
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Key dates
| Filing date | Feb 27, 2008 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Sep 29, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/755
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.