Light emitting diodes with smooth surface for reflective electrode

US8168984B2 · kind B2 · utility

Assignee

• Bridgelux, Inc. · US

Inventors

• Chao-Kun Lin · Fremont, US
• Heng Liu · Sunnyvale, US

Key dates

• Filing date: Feb 23, 2011
• Grant date: May 1, 2012
• Expiry date: Feb 23, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure. The epitaxial layer structure includes a transparent ohmic contact layer having a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed. The epitaxial layer structure includes a p-type epitaxial layer and a n-type epitaxial layer, wherein the n-type epitaxial layer is coupled between the first electrode and the p-type epitaxial layer, and the p-type epitaxial layer is between the second electrode and the n-type epitaxial layer. The first electrode is located on the n-type epitaxial layer.