Nitride based semiconductor light emitting diode
US8168995B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2006 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | May 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.