Compound semiconductor epitaxial substrate and process for producing the same
US8169004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2005 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | May 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b).Lm Lm>Ls>Lc (2a)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.