Copper interconnection structures and semiconductor devices
US8169079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2009 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Dec 29, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49204
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.