Pixel structures with repairable capacitor structures
US8169561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2005 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Jun 22, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pixel structure including an active device, a pixel electrode connected with the active device, a bottom electrode disposed under the pixel electrode, upper electrodes disposed between the pixel electrode and the bottom electrode and connected with the pixel electrode, a first dielectric layer disposed between the bottom electrode and the upper electrodes and a second dielectric layer disposed between the upper electrodes and the pixel electrode is provided. The total area of the upper electrodes overlapping with the bottom electrode is A, and the overlapping portion of the pixel electrode and each upper electrode includes a contact region and a reserved region having total area B. The dielectric constant and thickness of the first dielectric layer is ∈1 and d1; and for second dielectric layer ∈2 and d2, wherein 0.5<(∈1·d2·A)/(∈2·d1·B)<1.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.