Sense amplifier used in electrically erasable programmable read-only memory and the implementing method thereof
US8169834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2009 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Jul 14, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier and method of implementing includes a reference current generation circuit, which is used for providing a reference current with a settable temperature coefficient for a main circuit of the sense amplifier; the main circuit is used for comparing the reference current with a storage cell current, and distinguishing between 0 and 1 Storage Cell. A method of implementing the sense amplifier that is as below: With an additional current reference circuit, generating and inputting the reference current with a positive/negative/zero temperature coefficient into the main circuit, by mixing a proportional absolute temperature current and a constant current according to different ratios; a storage cell selection tube in a mirror branch of a biased current of the main circuit, so as to constitute a source degeneration circuit, making the biased current change with the power supply voltage and realizing a gain compensation function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.