Organic thin film transistor, method of fabricating the same, and gate insulating layer used in the same
US8174004B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Sep 15, 2009 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Sep 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/476
Abstract
An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.