Semiconductor device and method of manufacturing the semiconductor device
US8174021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2010 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Sep 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.