Patent · US Active

Method for making a transducer, transducer made therefrom, and applications thereof

US8174352B2 · kind B2 · utility

12Cited by
2References
37Claims
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Key dates

Filing dateJun 26, 2009
Grant dateMay 8, 2012
Priority date
Expiry dateJun 26, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49007
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.