Semiconductor device and method for manufacturing the same
US8174355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2008 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Feb 5, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A resistor R1 formed by forming a first resistor layer 5a of 20 nm thickness including a tantalum nitride film at a concentration of nitrogen of less than 30 at % and a second resistor layer of 5 nm thickness including a tantalum nitride film at a concentration of nitrogen of 30 at % or more successively by a reactive DC sputtering method using tantalum as a sputtering target material and using a gas mixture of argon and nitrogen as a sputtering gas, and then fabricating the first and the second resistor layers, in which the resistance change ratio of the resistor can be suppressed to less than 1% even when a thermal load is applied in the interconnection step, by the provision of the upper region at a concentration of nitrogen of 30 at % or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.