Image sensing system and method utilizing a MOSFET
US8174602B2 · kind B2 · utility
1Cited by
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22Claims
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Key dates
| Filing date | Jan 15, 2009 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Nov 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A unit cell includes a MOSFET and an integration capacitor. The MOSFET includes a source, a drain, and a gate. The drain is coupled to the source, and the MOSFET is operable to store a first portion of an electric charge corresponding to a detected light intensity. The integration capacitor includes a first end and a second end. The first end is coupled to the drain of the MOSFET and the second end is coupled to a ground. The integration capacitor is operable to store a second portion of the electric charge corresponding to the detected light intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.