Patent · US Active

Diode laser structure for generating diode laser radiation

US8175130B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

TRUMPF Laser GmbH + Co. KG · DE

Inventors

Stephan Strohmaier · Berlin, DE
Christoph Tillkorn · Villingendorf, DE

Key dates

Filing date	Aug 11, 2010
Grant date	May 8, 2012
Priority date	—
Expiry date	Nov 19, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/18
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A diode laser structure includes multiple stripe emitters disposed next to each other, in which each of the stripe emitters is configured to emit, during operation, a laser beam having a corresponding beam parameter product with respect to a slow axis (BPPSA), where the stripe emitters are arranged such that the corresponding BPPSA of the laser beams successively decrease from a center of the diode laser structure towards a first edge of the diode laser structure and from the center of the diode laser structure towards a second edge of the diode laser structure, the second edge being opposite the first edge. The stripe emitters are oriented in a direction of the slow axis and are offset from one another in the direction of the slow axis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.